Accredited at “A++” grade (highest level as per modified criteria notified on 27.07.2017) by NAAC and Conferred “University with Potential for Excellence” status by UGC

Department :  Physics

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Name:Dr. Sandeep Sharma
Areas of Interest / SpecializationSemiconductor spintronics, 2D Materials for nanoelectronics device applications
Best Ten Publications:1. "Anomalous scaling of spin accumulation in ferromagnetic tunnel devices with silicon and germanium", S. Sharma, A. Spiesser, S. P. Dash, H. Saito, S. Yuasa, B. J. van Wees and R. Jansen, Phys. Rev. B 89, 075301 (2014). 2. "Crystal-induced anisotropy of spin accumulation in Si/MgO/Fe and Si/Al2O3/Ferromagnet tunnel devices”, S. Sharma, A. Spiesser, H. Saito, S. Yuasa, B. J. van Wees and R. Jansen, Phys. Rev. B 87, 085307 (2013). 3."Anisotropy of spin polarization and spin accumulation in Si/Al2O3/Ferromagnet tunnel devices"' S. Sharma, S. P. Dash, H. Saito, S. Yuasa, Bart J. van Wees and Ron Jansen, Phys. Rev. B 86, 165308 (2012). 4. "Silicon spintronics with ferromagnetic tunnel devices", R. Jansen, S. P. Dash, S. Sharma, and B. C. Min, Semicond. Sci. Technol. 27, 083001 (2012). 5. "Thermal Spin Transfer from Ferromagnet to Silicon by Tunnel Spin-Seebeck effect”, J. C. Le Breton, S. Sharma, H. Saito, S. Yuasa and Ron Jansen, Nature 475, 82-85 (2011). 6. "Electrical creation of spin accumulation in p-type Germanium”, H. Saito, S. Watanabe, Y. Mineno, S. Sharma, R. Jansen, S. Yuasa, and K. Ando, Solid State Communications 151, 1159-1161 (2011). 7. "Spin precession and decoherence near an interface with a ferromagnet", S.P. Dash, S. Sharma, J. C. Le Breton, H. Jaffres, J. Peiro, J. M. George, A. Lemaitre and Ron Jansen, Phys. Rev. B 84, 054410 (2011). 8. “Silicon spintronics at room temperature”, S.P. Dash, S. Sharma, J. C. Le Breton and R. Jansen, Proc. of SPIE, Vol.7760, 7760J (2010). 9. “Electrical spin injection into moderately doped Silicon enabled by tailored interfaces”, R. Jansen, B. C. Min, S. P. Dash, S. Sharma, Phys. Rev. B 82, 241305 (R) (2010). 10. "Electrical creation of spin polarization in silicon at room temperature”, S. P. Dash, S. Sharma, R. S. Patel, M. P. de Jong and Ron Jansen, Nature 462, 491-494 (2009).
Awards and Honours:1. FOM-Fellowship (2009-13) for foreign researcher, FOM The Netherlands. 2.Appoinment as an International researcher at AIST-Tsukuba, Japan (2010-13). 3.GATE-Fellowship,2001-02,2007-09. 4.Merit fellowship by HPBSE Dharamshala (1996-99). 5. UKIERI-Researcher, Sep-Dec,2008. 6. Merit position in 10+2 exam conducted by HPBSE-Dharamshala